Analytical model for oblique ion reflection at the Si surface

Author

Mizuno, Tomohisa ; Higuchi, Takayoshi ; Ishiuchi, Hidemi ; Matsumoto, Yasuo ; Saitoh, Yoshikazu ; Sawada, Shizuo ; Shinozaki, Satoshi

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2323

Lastpage

2327

Abstract

Experimental and analytical studies on oblique ion implantation into a Si trench sidewall are discussed. The observation that implanted ions at small incident angle are reflected at the trench sidewall cannot be explained by the conventional Gaussian distribution model. A simple analytical model for oblique ion reflection, considering the Rutherford scattering collision between implanted ions and the Si nucleus, is introduced. As the ion incident angle becomes smaller than 10°, more and more ions are reflected at the trench sidewall. In addition, the reflection index of arsenic ions is larger than that of phosphorus ions

Keywords

elemental semiconductors; ion implantation; semiconductor technology; silicon; As ions; Gaussian distribution model; P ions; Rutherford scattering collision; Si surface; Si trench sidewall; analytical model; analytical studies; ion nucleus collision; model; oblique ion implantation; oblique ion reflection; reflection index; semiconductor; small incident angle; Analytical models; Capacitance; Capacitors; Doping; Gaussian distribution; Humans; Implants; Impurities; Random access memory; Reflection;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8808

Filename

8808