Title :
Effect of finite metallization and inhomogeneous dopings on slow-wave-mode propagation
Author :
Kucera, Jacob J. ; Gutmann, Ronald J.
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
10/1/1997 12:00:00 AM
Abstract :
A finite-element simulation has been implemented to evaluate the slow-wave-mode propagation characteristics in metal-insulator-semiconductor (MIS) waveguiding structures. Particular emphasis has been placed on coplanar waveguides compatible with silicon integrated circuits (ICs), with an objective of evaluating the effect of inhomogeneous doping on propagation characteristics. The simulator has been successfully benchmarked against a number of cases presented in the literature, including MIS coplanar waveguides. The effect of inhomogeneous doping and finite metallization in maintaining a large slowing factor while reducing the attenuation constant and increasing transmission-line Q is presented, and constraints on slow-wave-mode passive components are discussed
Keywords :
MIS devices; MIS structures; MMIC; Q-factor; coplanar waveguides; digital integrated circuits; doping profiles; finite element analysis; integrated circuit metallisation; slow wave structures; CPW; MIS waveguiding structures; Si; Si integrated circuits; coplanar waveguides; finite metallization; finite-element simulation; inhomogeneous dopings; metal-insulator-semiconductor structures; propagation characteristics; slow-wave-mode passive components; slow-wave-mode propagation; transmission-line Q; Attenuation; Circuit simulation; Coplanar waveguides; Doping; Finite element methods; Metal-insulator structures; Metallization; Silicon; Transmission lines; Waveguide components;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
