Title :
CMOS Transistor Amplifier Temperature Compensation: Modeling and Analysis
Author :
Zhang, Yuying ; Yuan, Jiann-Shiun
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
fDate :
6/1/2012 12:00:00 AM
Abstract :
The effect of temperature variations on a cascode low-noise MOS amplifier is analyzed. A gate biasing scheme for temperature compensation is illustrated. RF circuit simulation results show that the low-noise amplifier with temperature compensation can reduce temperature variation effect on the noise figure of the amplifier over a wide range of temperatures. Analytical equations to predict temperature compensation effect are also presented.
Keywords :
CMOS analogue integrated circuits; MOSFET; low noise amplifiers; radiofrequency integrated circuits; CMOS transistor amplifier temperature compensation; RF circuit simulation; cascode low-noise MOS amplifier; gate biasing scheme; low-noise amplifier; temperature variation effect reduction; Gain; Logic gates; Mathematical model; Noise figure; Temperature distribution; Temperature sensors; Threshold voltage; Gate biasing; low-noise amplifier (LNA); noise figure; temperature compensation; variability;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2011.2180388
