Title :
Study of gate oxide leakage and charge trapping in ZMR and SIMOX SOI MOSFETs
Author :
Lee, Chun-Teh ; Burns, James A.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
Characterization of gate oxides grown on zone-melting-recrystallized (ZMR) and silicon-implanted-with-oxygen (SIMOX) films indicates oxide leakage and charge trapping to be several orders of magnitude greater than their bulk silicon counterparts. Electron trapping is the primary trapping mechanism for constant current injection in the gate oxides of these SOI (silicon-on-insulator) films. Similar type of traps are observed in ZMR and SIMOX oxides.<>
Keywords :
electron traps; insulated gate field effect transistors; oxidation; semiconductor-insulator boundaries; I-V characteristics; SIMOX films; SOI MOSFETs; Si-SiO/sub 2/; charge trapping; constant current injection; electron trapping; gate oxide leakage; zone melting recrystallised films; Amorphous materials; Conductive films; Electron traps; Immune system; MOSFETs; Semiconductor films; Silicon; Testing; Voltage;
Journal_Title :
Electron Device Letters, IEEE
