Title :
An analytic theory of the Auger transistor: a hot electron bipolar transistor
Author :
Tiwari, Sandip ; Wang, Wen I. ; East, Jack R.
fDate :
4/1/1990 12:00:00 AM
Abstract :
The operation of an Auger transistor is investigated, using a coupled analysis based on thermionic-emission and drift-diffusion theory. Characteristics for steady-state and small-signal operation are derived for single electron-hole pair generation by each injected hot electron. The effect of parasitics is included in this simple theory in order to project, for some of the plausible material systems, the figures of merit for high-frequency applications. The analysis suggests that Auger transistors employing very-small-bandgap semiconductors in the heavily doped base and operating at low temperatures exhibit good performance as devices are scaled in size and operating voltage
Keywords :
Auger effect; electron-hole recombination; hot carriers; hot electron transistors; semiconductor device models; Auger transistor; HET; analytic theory; coupled analysis; drift-diffusion theory; figures of merit; heavily doped base; high-frequency applications; hot electron bipolar transistor; low temperatures; parasitics; single electron-hole pair generation; small-signal operation; steady state operation; thermionic-emission; very-small-bandgap semiconductors; Bipolar transistors; Charge carrier processes; Conducting materials; Electrons; Impact ionization; Photonic band gap; Radiative recombination; Spontaneous emission; Steady-state; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
