Title :
Theoretical investigation of gain and linewidth enhancement factor for 1.55-μm tensile strained quantum-well lasers
Author :
Ryu, Sang-Wan ; Kim, Il-Kyo ; Jeong, Weon Guk ; Choe, Byung-Doo ; Park, Seoung-Hwan
Author_Institution :
Dept. of Phys., Seoul Nat. Univ., South Korea
fDate :
4/1/1997 12:00:00 AM
Abstract :
The performance of quantum-well laser diodes with tensile strained wells was theoretically calculated. Using 4×4 Luttinger-Kohn Hamiltonian, valence band dispersion was calculated and used for the calculation of material gain. Linewidth enhancement factor was obtained by calculating the change of refractive index due to interband transition and free carrier plasma motion. The tensile well shows smaller material and differential gain compared to the compressive strained one. But smaller linewidth enhancement factor is obtained due to the absence of free carrier plasma effect. Linewidth enhancement factor is further reduced by p-type modulation doping in the barrier
Keywords :
electro-optical modulation; infrared sources; laser theory; laser transitions; quantum well lasers; semiconductor doping; spectral line breadth; valence bands; 1.55-μm tensile strained quantum-well laser gain theory; 4×4 Luttinger-Kohn Hamiltonian; differential gain; free carrier plasma effect; free carrier plasma motion; interband transition; linewidth enhancement factor; material gain; p-type modulation doping; quantum-well laser diodes; refractive index; tensile strained wells; tensile well; valence band dispersion; Capacitive sensors; Diode lasers; Effective mass; Epitaxial layers; Optical materials; Physics; Plasma materials processing; Quantum well lasers; Refractive index; Tensile strain;
Journal_Title :
Lightwave Technology, Journal of
