Theoretical investigation of gain and linewidth enhancement factor for 1.55-μm tensile strained quantum-well lasers

Author

Ryu, Sang-Wan ; Kim, Il-Kyo ; Jeong, Weon Guk ; Choe, Byung-Doo ; Park, Seoung-Hwan

Author_Institution

Dept. of Phys., Seoul Nat. Univ., South Korea

Volume

15

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

711

Lastpage

716

Abstract

The performance of quantum-well laser diodes with tensile strained wells was theoretically calculated. Using 4×4 Luttinger-Kohn Hamiltonian, valence band dispersion was calculated and used for the calculation of material gain. Linewidth enhancement factor was obtained by calculating the change of refractive index due to interband transition and free carrier plasma motion. The tensile well shows smaller material and differential gain compared to the compressive strained one. But smaller linewidth enhancement factor is obtained due to the absence of free carrier plasma effect. Linewidth enhancement factor is further reduced by p-type modulation doping in the barrier

Keywords

electro-optical modulation; infrared sources; laser theory; laser transitions; quantum well lasers; semiconductor doping; spectral line breadth; valence bands; 1.55-μm tensile strained quantum-well laser gain theory; 4×4 Luttinger-Kohn Hamiltonian; differential gain; free carrier plasma effect; free carrier plasma motion; interband transition; linewidth enhancement factor; material gain; p-type modulation doping; quantum-well laser diodes; refractive index; tensile strained wells; tensile well; valence band dispersion; Capacitive sensors; Diode lasers; Effective mass; Epitaxial layers; Optical materials; Physics; Plasma materials processing; Quantum well lasers; Refractive index; Tensile strain;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.566694

Filename

566694