Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs

Author

Liu, Zhi Hong ; Ng, Geok Ing ; Arulkumaran, Subramaniam ; Maung, Ye Kyaw Thu ; Teo, Khoon Leng ; Foo, Siew Chuen ; Sahmuganathan, Vicknesh

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

58

Issue

2

fYear

2011

Firstpage

473

Lastpage

479

Abstract

In this paper, a comprehensive study on the effect of plasma-enhanced chemical-vapor-deposited SiN surface passivation on the bias-dependent small-signal equivalent-circuit elements is carried out for AlGaN/GaN high-electron mobility transistors on a high-resistivity silicon substrate. The direct-current and small-signal performance of the device was found to be improved by surface passivation. The small-signal equivalent-circuit parameters at various gate and drain biases were extracted, and the physical mechanisms of their bias-dependent behaviors before and after passivation are discussed in detail.

Keywords

III-V semiconductors; aluminium compounds; elemental semiconductors; equivalent circuits; gallium compounds; high electron mobility transistors; passivation; plasma CVD; silicon; silicon compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; PECVD; Si; SiN; bias-dependent equivalent-circuit elements; high electron mobility transistors; high-resistivity silicon substrate; plasma enhanced chemical vapor deposition; surface passivation; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Passivation; Silicon compounds; Equivalent-circuit parameters (ECPs); GaN; high-electron mobility transistor (HEMT); passivation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2093144

Filename

5667054