Title :
Physical Foundation of a Recently Proposed Schottky-Contact Model
Author :
Schroeder, Damien
Author_Institution :
Inst. of Nanoelectron., Hamburg Univ. of Technol., Hamburg, Germany
fDate :
3/1/2011 12:00:00 AM
Abstract :
The goal of this correspondence is to supplement the Schottky-contact model proposed in “A Generalized Drift-Diffusion Model for Rectifying Schottky Contact Simulation,” IEEE Transactions on Electron Devices, vol. 57, no. 7, July 2010, with a solid physical foundation by rigorously rederiving it from an analytical solution of Boltzmann´s equation in the boundary layer.
Keywords :
Boltzmann equation; Schottky barriers; rectification; semiconductor device models; Boltzmann equation; Schottky-contact model; analytical solution; boundary layer; generalized drift-diffusion model; rectifying Schottky contact simulation; Schottky barriers; semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2093902
