Title :
Fabrication of high-speed GaAs photoconductive pulse generators and sampling gates by ion implantation
Author :
Paulter, Nicholas G. ; Gibbs, Alan J. ; Sinha, Dipen N.
Author_Institution :
Los Alamos Nat. Lab., NM, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
An ion-implantation technique used to create high-speed photoconductive devices in semi-insulating gallium arsenide (GaAs) is described. The effects of electrical contacts, GaAs substrate material, and various implant parameters on device performance are presented. The best measured performance characteristics of sampled (correlation) waveforms are: full-width-at-half-maximum of 4.5 ps, rise time (10 to 90% of full amplitude) of 3.2 ps, and signal-to-noise ratio of approximately 50 dB (integration time is 10 ms)
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; ion implantation; photoconducting devices; pulse generators; semiconductor switches; 10 ms; 3.2 to 4.5 ps; 50 dB; FWHM; GaAs substrate material; SNR; device performance; electrical contacts; fabrication; full-width-at-half-maximum; high-speed GaAs photoconductive pulse generators; high-speed photoconductive devices; implant parameters; integration time; ion implantation; performance characteristics; photoconducting switches; rise time; sampled waveforms; sampling gates; semiinsulating GaAs; signal-to-noise ratio; Contacts; Fabrication; Gallium arsenide; Implants; Photoconducting devices; Photoconducting materials; Photoconductivity; Pulse generation; Signal to noise ratio; Time measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
