A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

Author

Jeon, Byung-Gil ; Choi, Mun-Kyu ; Song, Yoonjong ; Oh, Seung-Kyu ; Chung, Yeonbae ; Suh, Kang-Deog ; Kim, Kinam

Author_Institution

Div. of Memory Technol., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea

Volume

35

Issue

11

fYear

2000

Firstpage

1690

Lastpage

1694

Abstract

A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric random access memory (FRAM) was developed. The FRAM relies on the use of a reference scheme optimally adapted to the entire cell population of an individual device. A simple voltage level detector protects the device against data loss during drops in supply voltage. Finally, a special test mode was implemented to optimize read pulse width. By using these techniques, a high-performance 1T1C 4-Mb FRAM was successfully developed.

Keywords

ferroelectric storage; random-access storage; 0.4 micron; 1T1C FRAM; 3.3 V; 4 Mbit; fixed bitline reference voltage generator; nonvolatile ferroelectric random access memory; power-off data protection circuit; pulse width control; Capacitors; Circuits; Ferroelectric films; Nonvolatile memory; Protection; Random access memory; Signal generators; Space vector pulse width modulation; Timing; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.881216

Filename

881216