Title :
A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit
Author :
Jeon, Byung-Gil ; Choi, Mun-Kyu ; Song, Yoonjong ; Oh, Seung-Kyu ; Chung, Yeonbae ; Suh, Kang-Deog ; Kim, Kinam
Author_Institution :
Div. of Memory Technol., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea
Abstract :
A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric random access memory (FRAM) was developed. The FRAM relies on the use of a reference scheme optimally adapted to the entire cell population of an individual device. A simple voltage level detector protects the device against data loss during drops in supply voltage. Finally, a special test mode was implemented to optimize read pulse width. By using these techniques, a high-performance 1T1C 4-Mb FRAM was successfully developed.
Keywords :
ferroelectric storage; random-access storage; 0.4 micron; 1T1C FRAM; 3.3 V; 4 Mbit; fixed bitline reference voltage generator; nonvolatile ferroelectric random access memory; power-off data protection circuit; pulse width control; Capacitors; Circuits; Ferroelectric films; Nonvolatile memory; Protection; Random access memory; Signal generators; Space vector pulse width modulation; Timing; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
