Title :
G-band rectangular waveguide filter fabricated using deep reactive ion etching and bonding processes
Author :
Zhao Xing-hai ; Shan Guang-cun ; Du Yi-jia ; Bao Jing-fu ; Zhu Hao-shen ; Zheng Ying-bin ; Shek Chan-hung ; Cheng Yong-sheng
Author_Institution :
Inst. of Electron. Eng., China Acad. of Eng. Phys., Mianyang, China
fDate :
12/1/2012 12:00:00 AM
Abstract :
A G-band microelectromechanical system (MEMS) rectangular waveguide iris filter is designed and fabricated. The effects of the metallised layer and iris thickness, and roughness, on filter main performances are investigated. The prototypes were fabricated using MEMS manufacturing techniques. The key technique problems including deep etching, electroplating and bonding are researched and settled. The measured insertion loss can get to be 1.5-2.0-dB, the central frequency is 174-GHz, the bandwidth is 9.6-GHz, and the isolation out of the bandpass is larger than 15-dB. The test results show that the radio frequency MEMS filter meets practical requirements, which proves that it is a successful example for fabricating such rectangular waveguide devices at one to several hundred gigahertz frequencies using such presented processes.
Keywords :
band-pass filters; bonding processes; electroplating; micromechanical devices; radiofrequency filters; rectangular waveguides; sputter etching; waveguide filters; G-band microelectromechanical system; G-band rectangular waveguide filter fabrication; MEMS manufacturing technique; MEMS rectangular waveguide iris filter; bandpass filter; bandwidth 9.6 GHz; bonding process; deep reactive ion etching; electroplating; frequency 174 GHz; gigahertz frequency; insertion loss; iris roughness; iris thickness; loss 1.5 dB to 2 dB; metallised layer; radio frequency MEMS filter; rectangular waveguide device;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2012.0567