DocumentCode :
1403557
Title :
Long-term operation of planar InGaAs/InP p-i-n photodiodes
Author :
Bauer, Josef G. ; Trommer, Reiner
Author_Institution :
Siemens AG, Munich, West Germany
Volume :
35
Issue :
12
fYear :
1988
fDate :
12/1/1988 12:00:00 AM
Firstpage :
2349
Lastpage :
2354
Abstract :
The long-term stability of planar InGaAs p-i-n photodiodes with InP cap layer and SiNx passivation at elevated temperatures up to 200°C is discussed. An increase of the dark current with saturation at the level of a few nanoamperes has been observed as the only chip-related degradation mode. In additional experiments this increase has been identified as surface leakage current flowing due to charge transfer in the SiNx and to changes in the InP-SiNx interface state density. For a dark current increase to 1 nA under 15-V reverse-bias voltage at room temperature, a median lifetime of 109 h has been extrapolated
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; life testing; p-i-n diodes; photodiodes; reliability; 1 nA; 15 V; 1E9 h; 80 to 200 C; InGaAs-InP; InP cap layer; InP-SiNx interface state density; SiNx passivation; accelerated testing; chip-related degradation mode; dark current; elevated temperatures; long term operation; long-term stability; median lifetime; p-i-n photodiodes; planar p-i-n photodiodes; reverse-bias voltage; room temperature; surface leakage current; Dark current; Degradation; Indium gallium arsenide; Indium phosphide; Leakage current; PIN photodiodes; Passivation; Silicon compounds; Stability; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.8813
Filename :
8813
Link To Document :
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