Title :
A new low-power GaAs two-single-port memory cell
Author :
Bernal, Alvaro ; Guyot, Alain
Author_Institution :
TIMA Lab., Grenoble, France
fDate :
7/1/1998 12:00:00 AM
Abstract :
This paper describes an experimental static memory cell in GaAs MESFET technology. The memory cell has been implemented using a mix of several techniques already published in order to overcome some of their principal drawbacks related to ground shifting, destructive readout, and leakage current effects. The cell size is 36×37 μm2 using a 0.6-μm technology. An experimental 32 word × 32 bit array has been designed. From simulation results, an address access time of 1 ns has been obtained. A small 8 word×4 bit protoype was fabricated. The cell can be operated at the single supply voltage from 1 up to 2 V. The evaluation is provided according to the functionality and power dissipation. Measured results show a total current consumption of 14 μA/cell when operated at 1 V
Keywords :
III-V semiconductors; MESFET integrated circuits; SRAM chips; cellular arrays; gallium arsenide; leakage currents; memory architecture; 0.6 micron; 1 ns; 1 to 2 V; 32 bit; III-V semiconductors; MESFET technology; address access time; cell size; destructive readout; functionality; ground shifting; leakage current effects; power dissipation; static memory cell; supply voltage; total current consumption; two-single-port memory cell; Driver circuits; FETs; Gallium arsenide; Laboratories; Leakage current; MESFETs; Microprocessors; Random access memory; Schottky diodes; Temperature;
Journal_Title :
Solid-State Circuits, IEEE Journal of
