Characteristics of Double-Gate Ga–In–Zn–O Thin-Film Transistor

Author

Son, Kyoung-Seok ; Jung, Ji-Sim ; Lee, Kwang-Hee ; Kim, Tae-Sang ; Park, Joon-Seok ; Choi, Yun-Hyuk ; Park, KeeChan ; Kwon, Jang-Yeon ; Koo, Bonwon ; Lee, Sang-Yoon

Author_Institution

Display Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea

Volume

31

Issue

3

fYear

2010

fDate

3/1/2010 12:00:00 AM

Firstpage

219

Lastpage

221

Abstract

A Ga-In-Zn-O thin-film transistor with double-gate structure is reported. Enhancement-mode operation that is essential to the constitution of a low-power digital circuitry is easily achieved when the upper and lower gate electrodes are tied together. The saturation mobility and the subthreshold swing are improved from 3.65 cm²/(V??s) and 0.44 V/dec to 18.9 cm²/(V??s) and 0.14 V/dec, respectively, compared with the single-gate structure. We can modulate the threshold voltage of either gate by adjusting the bias on the other gate.

Keywords

electrodes; gallium compounds; indium compounds; thin film transistors; zinc compounds; Ga-In-Zn-O; Ga-In-Zn-O thin-film transistor; double-gate structure; enhancement-mode operation; gate electrode; low-power digital circuitry; saturation mobility; subthreshold swing; threshold voltage; Double gate; Ga–In–Zn–O (GIZO); oxide–semiconductor; thin-film transistor (TFT); threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2038805

Filename

5406126