Title :
Suppression of Read Disturb Fail Caused by Boosting Hot Carrier Injection Effect for 3-D Stack NAND Flash Memories
Author :
Byeong-In Choe ; Jung-Kyu Lee ; Byung-Gook Park ; Jong-Ho Lee
Author_Institution :
Interuniv. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
Abstract :
A new bias pulse method was proposed to suppress read disturbance in unselected strings of 3-D stack NAND flash memories. Using the proposed read method, we could suppress effectively a large cell Vth shift generated by boosting hot carrier injection. As a result, the cell Vth shift in unselected string is quite similar to normal read disturbance in select string. The proposed read method was verified by both measurement and simulation.
Keywords :
NAND circuits; flash memories; hot carriers; three-dimensional integrated circuits; 3-D stack NAND flash memories; bias pulse method; boosting hot carrier injection effect; read disturb fail suppression; Ash; Boosting; Computer architecture; Electric potential; Hot carrier injection; Microprocessors; Stress; 3-D stack NAND flash; NAND flash; hot carrier injection; read disturb;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2288991
