Title :
Metal Hole Arrays as Resonant Photo-Coupler for Charge Sensitive Infrared Phototransistors
Author :
Nickels, Patrick ; Matsuda, Shinpei ; Ueda, Takeji ; An, Zhenghua ; Komiyama, Susumu
Author_Institution :
Dept. of Basic Sci., Univ. of Tokyo, Tokyo, Japan
fDate :
3/1/2010 12:00:00 AM
Abstract :
Metallic photo-couplers utilizing surface plasmon polariton (SPP) excitation have been studied experimentally and theoretically for improving the quantum efficiency of charge sensitive infrared phototransistors (CSIP). Metallic hole arrays deposited on top of the photo-active area of CSIPs (wavelength of 14.7 ¿m) induce intensified near fields for the intersubband transition in a GaAs quantum well at 100 nm below the metal/substrate interface. Cross-hole arrays yield the highest efficiency of 7%, which is by a factor of about four higher than the previously achieved value with square patch arrays.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; optical arrays; optical couplers; photodetectors; phototransistors; polaritons; semiconductor quantum wells; surface plasmon resonance; AlGaAs-GaAs; GaAs; charge sensitive infrared phototransistors; cross-hole arrays; intersubband transition; metal hole arrays; metal-substrate interface; photoactive area; quantum efficiency; quantum well; resonant photocoupler; size 10 nm; square patch arrays; surface plasmon polariton excitation; wavelength 14.7 mum; Electromagnetic wave absorption; Electrons; Gallium arsenide; Infrared detectors; Nickel; Photodetectors; Phototransistors; Plasmons; Resonance; Spectroscopy; Intersubband transition; metal hole array photo-coupler; quantum efficiency; quantum well infrared phototransistor; surface plasmon polariton resonance;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2009.2035822
