InGaAs/InAlAs/AlAs heterostructure barrier varactors for harmonic multiplication

Author

Melique, X. ; Carbonell, J. ; Havart, R. ; Mounaix, P. ; Vanbesien, O. ; Lippens, D.

Author_Institution

Inst. d´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´Ascq, France

Volume

8

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

254

Lastpage

256

Abstract

We report on the radio frequency (RF) characterization up to 110 GHz of probable high-performance heterostructure barrier varactors fabricated from InP-based strained epilayers. By making use of a dual step-like barrier scheme, the voltage handling is as high as 12 V whereas the capacitance ratio at 85 GHz achieves 5:1 for a zero-bias capacitance of 1 fF/μm² without deviation in the frequency band investigated. Good agreement between calculated and measured scattering parameters is found on the basis of electromagnetic simulation of diode embedding.

Keywords

III-V semiconductors; S-parameters; aluminium compounds; capacitance; frequency multipliers; gallium arsenide; harmonics; indium compounds; microwave diodes; millimetre wave diodes; varactors; 110 GHz; 12 V; InGaAs-InAlAs-AlAs; InP-based strained epilayers; RF characterization; capacitance ratio; dual step-like barrier scheme; harmonic multiplication; heterostructure barrier varactors; scattering parameters; voltage handling; Capacitance; Diodes; Electromagnetic measurements; Electromagnetic scattering; Indium compounds; Indium gallium arsenide; Radio frequency; Scattering parameters; Varactors; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.701383

Filename

701383