Title :
Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step
Author :
Kuo, Cheng-Huang ; Fu, Y.K. ; Chi, G.C. ; Chang, Shoou-Jinn
Author_Institution :
Dept. of Opt. & Photonics, Nat. Central Univ., Jhongli, Taiwan
fDate :
3/1/2010 12:00:00 AM
Abstract :
GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; light emitting diodes; localised states; phase separation; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; GaN-based LED epitaxial layers; InGaN; asymmetric two-step light-emitting diode; current 20 mA; degree of localization states; indium content shallow step; inhomogeneous indium distribution; injection current; metalorganic chemical vapor deposition; output power; phase separation; Atom optics; Atomic force microscopy; Gallium nitride; Indium; Light emitting diodes; Optical buffering; Optical microscopy; Optical pumping; Radiative recombination; Solid state lighting; InGaN–GaN; light-emitting diodes (LEDs); localization; low indium composition;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2009.2031253
