A transferred-substrate HBT wide-band differential amplifier to 50 GHz

Author

Agarwal, B. ; Lee, Q. ; Pullela, R. ; Mensa, D. ; Guthrie, J. ; Rodwell, M.J.W.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

8

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

263

Lastpage

265

Abstract

Differential amplifiers are used in automatic gain control amplifiers and limiting amplifiers in fiber-optic receivers. Here we present a differential amplifier fabricated in the transferred-substrate heterojunction bipolar transistor (HBT) integrated circuit technology. The amplifier has a gain of 11 dB and the 3-dB bandwidth is greater than 50 GHz. Two gain stages with DC interstage coupling are used. Biasing is through active current mirrors and a single negative power supply. A bandwidth of 50 GHz is the highest bandwidth ever reported for a broad-band differential amplifier in any technology

Keywords

automatic gain control; bipolar MIMIC; differential amplifiers; heterojunction bipolar transistors; millimetre wave amplifiers; wideband amplifiers; 11 dB; 50 GHz; AGC amplifiers; DC interstage coupling; HBT wideband differential amplifier; active current mirrors; biasing; broadband amplifier; single negative power supply; transferred-substrate HBT IC technology; Bandwidth; Broadband amplifiers; Circuits; Clocks; Differential amplifiers; Distributed amplifiers; Gain control; Heterojunction bipolar transistors; Mirrors; Power supplies;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.701387

Filename

701387