Title :
Analytic model of parasitic capacitance attenuation in CMOS devices with hyperthin oxides
Author :
Ahmed, K. ; Ibok, E. ; Hauser, J.
Author_Institution :
Conexant Syst. Inc., Newport Beach, CA, USA
fDate :
9/28/2000 12:00:00 AM
Abstract :
The parasitic accumulation capacitance attenuation in MOS structures with hyper-thin oxides has been modelled using a distributed RC network. The simple analytic model is in excellent agreement with a two-dimensional numerical simulation and experimental data
Keywords :
MOS capacitors; CMOS devices; analytic model; distributed RC network; hyperthin oxides; parasitic capacitance attenuation; two-dimensional numerical simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001160
