• DocumentCode
    1404319
  • Title

    Analytic model of parasitic capacitance attenuation in CMOS devices with hyperthin oxides

  • Author

    Ahmed, K. ; Ibok, E. ; Hauser, J.

  • Author_Institution
    Conexant Syst. Inc., Newport Beach, CA, USA
  • Volume
    36
  • Issue
    20
  • fYear
    2000
  • fDate
    9/28/2000 12:00:00 AM
  • Firstpage
    1699
  • Lastpage
    1700
  • Abstract
    The parasitic accumulation capacitance attenuation in MOS structures with hyper-thin oxides has been modelled using a distributed RC network. The simple analytic model is in excellent agreement with a two-dimensional numerical simulation and experimental data
  • Keywords
    MOS capacitors; CMOS devices; analytic model; distributed RC network; hyperthin oxides; parasitic capacitance attenuation; two-dimensional numerical simulation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001160
  • Filename
    882010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1404319