Title :
Threshold current reduction in InGaN MQW laser diode with λ/4 air/semiconductor Bragg reflectors
Author :
Marinelli, C. ; Sargent, L.J. ; Wonfor, A. ; Rorison, J.M. ; Penty, R.V. ; White, I.H. ; Heard, P.J. ; Hasnain, G. ; Schneider, R.
Author_Institution :
Centre for Commun. Res., Bristol Univ., UK
fDate :
9/28/2000 12:00:00 AM
Abstract :
A 13% reduction in the threshold current density of InGaN laser diodes is demonstrated upon the introduction of two 5λ/4 air/nitride Bragg reflectors. These are defined at one end of the laser cavity by means of focused ion beam etching
Keywords :
III-V semiconductors; current density; focused ion beam technology; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser mirrors; optical fabrication; quantum well lasers; sputter etching; λ/4 air/semiconductor Bragg reflectors; InGaN; InGaN MQW laser diode; InGaN laser diodes; focused ion beam etching; laser cavity; multiple quantum well laser diode; threshold current density; threshold current reduction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001230
