Title :
Post poly-Si gate rapid thermal nitridation for boron penetration reduction and oxide reliability improvement
Author :
Zhou, Zhixu ; Tinkler, Steven ; Schroder, Dieter K. ; Paulsen, Ron ; Dahl, Phillip ; Keating, Rich ; Park, Changhae
Author_Institution :
Motorola Inc., Mesa, AZ, USA
fDate :
7/1/1998 12:00:00 AM
Abstract :
Boron penetration from p/sup +/ doped poly-Si gates in PMOSFET is greatly reduced by post poly-Si gate rapid thermal nitridation. Gate oxide reliability against boron penetration is significantly enhanced. When post poly-Si nitridation is combined with N/sub 2/O annealed gate oxides, gate oxide charge-to-breakdown is markedly improved.
Keywords :
MOSFET; boron; elemental semiconductors; nitridation; rapid thermal processing; semiconductor device reliability; silicon; B penetration; PMOSFET; Si:B; charge-to-breakdown; gate oxide reliability; p/sup +/ doped poly-Si gates; post poly-Si gate rapid thermal nitridation; Boron; Degradation; Implants; Interface states; MOSFET circuits; Oxidation; Rapid thermal annealing; Temperature; Threshold voltage; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
