DocumentCode :
1404437
Title :
Post poly-Si gate rapid thermal nitridation for boron penetration reduction and oxide reliability improvement
Author :
Zhou, Zhixu ; Tinkler, Steven ; Schroder, Dieter K. ; Paulsen, Ron ; Dahl, Phillip ; Keating, Rich ; Park, Changhae
Author_Institution :
Motorola Inc., Mesa, AZ, USA
Volume :
19
Issue :
7
fYear :
1998
fDate :
7/1/1998 12:00:00 AM
Firstpage :
237
Lastpage :
240
Abstract :
Boron penetration from p/sup +/ doped poly-Si gates in PMOSFET is greatly reduced by post poly-Si gate rapid thermal nitridation. Gate oxide reliability against boron penetration is significantly enhanced. When post poly-Si nitridation is combined with N/sub 2/O annealed gate oxides, gate oxide charge-to-breakdown is markedly improved.
Keywords :
MOSFET; boron; elemental semiconductors; nitridation; rapid thermal processing; semiconductor device reliability; silicon; B penetration; PMOSFET; Si:B; charge-to-breakdown; gate oxide reliability; p/sup +/ doped poly-Si gates; post poly-Si gate rapid thermal nitridation; Boron; Degradation; Implants; Interface states; MOSFET circuits; Oxidation; Rapid thermal annealing; Temperature; Threshold voltage; Transconductance;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.701428
Filename :
701428
Link To Document :
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