Title :
Green electroluminescent (Ga,In,AI)N LEDs grown on Si (111)
Author :
Dalmasso, S. ; Feltin, E. ; de Mierry, P. ; Beaumont, B. ; Gibart, P. ; Leroux, M.
Author_Institution :
CNRS, Valbonne, France
fDate :
9/28/2000 12:00:00 AM
Abstract :
The authors report on GaInN/GaN green electroluminescent diodes (λ=508 nm) grown on Si (111) substrate. The I-V characteristics of this LED at room temperature are contrasted with a similar diode grown on sapphire. The turn-on voltage is 6.8 V and the operating voltage is 10.7 V at 20 mA. The large density of dislocations present in these heteroepitaxial nitrides on Si materials manifests itself through high reverse currents and low shunt resistances
Keywords :
III-V semiconductors; MOCVD; dislocation density; electroluminescent devices; gallium compounds; indium compounds; light emitting diodes; optical fabrication; semiconductor heterojunctions; 10.7 V; 20 mA; 298 K; 508 nm; 6.8 V; GaInN-GaN; GaInN/GaN green electroluminescent diodes; I-V characteristics; LEDs; Si; Si (111); Si materials; dislocations; green electroluminescent LED; heteroepitaxial nitrides; operating voltage; reverse currents; room temperature; sapphire; shunt resistances; turn-on voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001207
