High-efficiency, low voltage resonant-cavity light-emitting diodes operating around 650 nm

Author

Gray, J.W. ; Jalili, Y.S. ; Stavrinou, P.N. ; Whitehead, M. ; Parry, G. ; Joel, A. ; Robjohn, R. ; Petrie, R. ; Hunjan, S. ; Gong, P. ; Duggan, G.

Author_Institution

Blackett Lab., Imperial Coll. of Sci., Technol. & Med., London, UK

Volume

36

Issue

20

fYear

2000

fDate

9/28/2000 12:00:00 AM

Firstpage

1730

Lastpage

1731

Abstract

High efficiencies and low voltages for resonant-cavity light emitting diodes operating close to 650 nm are reported. Peak external quantum efficiencies of 6% are obtained for a low current injection of ~1 mA, giving an optical power output of 0.1 mW. For higher current injection at 13 mA, 1 mW of power is produced with a slightly lower, but modest, efficiency of 4%. These record high efficiencies mean that high power performance previously achieved in RCLEDs at the inherently more efficient wavelength of 660 nm can now be replicated in 650 nm devices. Forward biased operating voltages are between 1.7 and 1.9 V for a current range of 0-60 mA

Keywords

MOCVD; cavity resonators; light emitting diodes; optical fabrication; optical resonators; 0 to 60 mA; 0.1 mW; 1 mA; 1 mW; 1.7 to 1.9 V; 13 mA; 4 percent; 6 percent; 650 nm; 660 nm; RCLED; current injection; current range; efficiency; efficient wavelength; forward biased operating voltages; high power performance; high-efficiency low voltage resonant-cavity light-emitting diodes; low current injection; optical power output; peak external quantum efficiencies; power; resonant-cavity light emitting diodes;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20001182

Filename

882031