Title :
Evaluation of effective electron velocity in AlGaN/GaN HEMTs
Author :
Akita, M. ; Kishimoto, S. ; Maezawa, K. ; Mizutani, T.
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Japan
fDate :
9/28/2000 12:00:00 AM
Abstract :
The authors have fabricated a 1.3 μm-long gate AlGaN/GaN HEMT with fT of 14.1 GHz, corresponding to a high 1T×gate length product of 18.3 GHz·μm. By analysing the relationship between the delay time and the inverse of the drain current, the effective electron velocity in the channel was evaluated to be as high as 1.2×107 cm/s
Keywords :
aluminium compounds; 1.3 micron; 14.1 GHz; AlGaN-GaN; AlGaN/GaN HEMTs; delay time; drain current inverse; effective electron velocity evaluation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001193
