Title :
Silicon direct bonding with simultaneous Al doping
Author :
Kim, E.D. ; Kim, S.C. ; Grekhov, I.V. ; Argunova, T.S. ; Beliakova, E.I. ; Kostina, L.S. ; Shmidt, N.M. ; Kostin, K.B.
Author_Institution :
Korea Electrotechnol. Res. Inst., Changwon, South Korea
fDate :
9/28/2000 12:00:00 AM
Abstract :
A simple method for power semiconductor devices with p-n junctions is suggested, using the silicon direct bonding technology with simultaneous p-layer formation at the bonding region by attaching two wafers in an aqueous Al-nitrate solution. The resulting high structural quality is explained by the formation of Al-O-Si bonds in addition to Si-O-Si bonds as well as by the mass transport phenomena stimulated by diffusion of Si and Al atoms at the bonding interface
Keywords :
aluminium; elemental semiconductors; power semiconductor devices; semiconductor device manufacture; semiconductor doping; silicon; wafer bonding; Al-O-Si bonds formation; Si direct bonding; Si-O-Si bonds formation; Si-Si:Al; aqueous Al-nitrate solution; bonding interface; high structural quality; mass transport phenomena; p-layer formation; p-n junctions; power semiconductor devices; simultaneous Al doping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001219
