Title :
Travelling Gunn domains in submicron GaAs MESFETs
Author :
Lugli, Paolo ; Grimm, M. ; Pabst, M. ; Luth, H.
Author_Institution :
Inst. fur Schicht- und Ionentech., Forschungzentrum Julich, Germany
Abstract :
A Monte Carlo study of the occurrence of high field travelling domains in submicron GaAs MESFETs is presented. The conditions for the domain formation and propagation are discussed and are related to the microscopic transport processes.
Keywords :
Gunn effect; III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; gallium arsenide; hot carriers; GaAs; Gunn domains; MESFETs; Monte Carlo study; domain formation; domain propagation; high field travelling domains; hot electron dynamics; submicron devices; transport processes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910254
