Title :
Operation and Optimization of Silicon-Diode-Based Optical Modulators
Author :
Spector, Steven J. ; Sorace, Cheryl M. ; Geis, Michael W. ; Grein, Matthew E. ; Yoon, Jung U. ; Lyszczarz, Theodore M. ; Ippen, Erich P. ; Kartner, Franz X.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol. (MIT), Cambridge, MA, USA
Abstract :
An optical modulator in silicon based on a diode structure has been operated in both forward and reverse bias. This modulator achieves near state-of-the-art performance in both modes, thereby making this device ideal for comparing the two modes of operation. In reverse bias, the device has a V¿L of 4.0 V·cm and a bandwidth of 26 GHz. In forward bias, the device is very sensitive, a V¿L as low as 0.0025 V·cm has been achieved, but the bandwidth is only 100 MHz. A new geometry for a reverse-bias device is proposed, and it is predicted to achieve a V¿L of 0.5 V·cm.
Keywords :
optical modulation; optimisation; semiconductor diodes; silicon; Si; bandwidth 26 GHz; forward bias; optical modulators; optimization; reverse bias; silicon diode; Bandwidth; Diodes; Electrooptic modulators; Optical modulation; Optical sensors; Optical waveguides; Plasma confinement; Plasma materials processing; Plasma waves; Silicon on insulator technology; Diodes; integrated optics; optical communication; optical modulation; silicon-on-insulator (SOI) technology;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2009.2027817
