DocumentCode
1404600
Title
A better understanding of the channel mobility of Si MOSFETs based on the physics of quantized subbands
Author
Lin, Mou-Shiung
Author_Institution
AT&T Bell Lab., Murray Hill, NJ, USA
Volume
35
Issue
12
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
2406
Lastpage
2411
Abstract
The recently reported larger mobility degradation at higher transverse electric fields and lower temperatures is explained based on the physics of electron population and scattering mechanisms of quantized subbands at (100) Si surfaces. The simple empirical mobility model proposed by T.-C. Ong et al. (ibid., vol.34, no.10, p.2129-35, 1987) is also discussed
Keywords
carrier mobility; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; MOSFETs; Si; channel mobility; empirical mobility model; higher transverse electric fields; lower temperatures; mobility degradation; models; physics of electron population; physics of quantized subbands; scattering mechanisms; Degradation; Electron mobility; Energy states; Land surface temperature; MOSFETs; Physics; Rough surfaces; Scattering; Surface roughness; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.8822
Filename
8822
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