DocumentCode
1404627
Title
Physical scaling rules for AlGaAs/GaAs power HBTs based on a small-signal equivalent circuit
Author
Schaper, U. ; Zwicknagl, P.
Author_Institution
Corp. Technol., Siemens AG, Munich, Germany
Volume
46
Issue
7
fYear
1998
fDate
7/1/1998 12:00:00 AM
Firstpage
1006
Lastpage
1009
Abstract
Physical scaling rules for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) containing 2-16 emitter fingers are demonstrated, the parameter extraction is based on a small signal equivalent circuit. The scaling parameters compare favorably with the measured data from the process control monitor
Keywords
III-V semiconductors; UHF bipolar transistors; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; power bipolar transistors; AlGaAs-GaAs; III-V semiconductors; emitter fingers; parameter extraction; physical scaling rules; power HBT; process control monitor; scaling parameters; small-signal equivalent circuit; Contact resistance; Doping; Equivalent circuits; Gallium arsenide; Gold; Heterojunction bipolar transistors; Ohmic contacts; Parameter extraction; Process control; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.701458
Filename
701458
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