A sub-nanosecond resonant-type monolithic T/R switch for millimeter-wave systems applications

Author

Madihian, Mohammad ; Desclos, Laurent ; Maruhashi, Kenichi ; Onda, Kazuhiko ; Kuzuhara, Masaaki

Author_Institution

Wireless Network Technol. Group, NEC Corp., Kawasaki, Japan

Volume

46

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

1016

Lastpage

1019

Abstract

This paper is concerned with the design consideration, fabrication process, and performance of a V-band monolithic transmit/receive (T/R) switch for millimeter-wave wireless networks applications. The developed switch integrated circuit (IC) has a novel structure in which to pass a signal, it presents a parallel resonant circuit to the signal by forward biasing a pair of switching heterojunction FET´s (HJFETs), but to block the signal, it presents a series resonant circuit to the signal by reverse biasing the switching HJFETs. With a control voltage of 0/3.2 V, the developed T/R switch exhibits a minimum insertion loss of 3.9 dB, a maximum isolation of 41 dB, and a high switching speed of 250 ps, over 57-61 GHz. The monolithic T/R switch chip size is 3.3 mm×1.7 mm

Keywords

JFET integrated circuits; circuit resonance; field effect MIMIC; field effect transistor switches; transceivers; 0 to 3.2 V; 250 ps; 3.9 dB; 57 to 61 GHz; V-band monolithic transmit/receive switch; design; fabrication; heterojunction FET; insertion loss; integrated circuit; isolation; millimeter-wave wireless network; parallel resonant circuit; series resonant circuit; subnanosecond switching speed; FETs; Fabrication; Heterojunctions; Millimeter wave integrated circuits; Process design; RLC circuits; Resonance; Switches; Switching circuits; Wireless networks;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.701461

Filename

701461