Effects of epitaxial lift-off on the DC, RF, and thermal properties of MESFET´s on various host materials

Author

Morf, Thomas ; Biber, Charlotte ; Bächtold, Werner

Author_Institution

Fed. Inst. of Technol., Zurich, Switzerland

Volume

45

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

1407

Lastpage

1413

Abstract

In this paper, we present an in-depth investigation on the effects of epitaxial lift-off (ELO) on GaAs MESFET´s. DC and microwave characteristics as well as thermal effects are considered. Devices were fabricated on a GaAs foundry process and transplanted by ELO. ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and are subsequently re-attached to a new host substrate. Host materials considered are InP, quartz and silicon with resistivities ranging from 11 mΩcm to 50 Ωcm

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; semiconductor epitaxial layers; DC properties; GaAs; GaAs MESFET; InP substrate; RF properties; epitaxial lift-off; foundry process; microwave characteristics; quartz substrate; resistivity; silicon substrate; thermal properties; CMOS technology; Etching; Foundries; Gallium arsenide; Indium phosphide; Integrated circuit technology; MESFETs; Radio frequency; Silicon; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.701469

Filename

701469