Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits

Neutron-induced soft error rates (SERs) of subhalf-micron CMOS SRAM and Latch circuits were studied both experimentally and analytically to investigate cosmic ray neutron-induced soft errors (SEs). Because the neutron beam used in the measurement has an energy spectrum similar to that of sea-level atmospheric neutrons, our SER data corresponds to those induced by cosmic ray neutrons. The α-particle induced SERs were also measured for comparison with the neutron-induced SER´s. Neutron-induced SEs occurred in both circuits. On the other hand, α-induced SEs occurred in SRAM, but not in the Latch circuits. The measured SERs agreed with simulated results. We discussed the significance of how cosmic ray neutrons affects CMOS circuits at ground level