A DC model for asymmetric trapezoidal gate MOSFET´s in strong inversion

Author

Wong, Shyh-Chyi ; Hsu, Shyh-Yuan ; Wang, Yeong-Her ; Houng, Mau-Phon ; Cho, Shih-Keng

Author_Institution

Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan

Volume

45

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

1459

Lastpage

1467

Abstract

Asymmetric trapezoidal gate (ATG) MOSFET is an innovative device having a structure of a relatively narrow drain-side width in order to reduce parasitic effects for enhancing device performance. In this paper, we develop a DC model for ATG MOSFET´s. We use a charge-based approach to explore the asymmetric feature between source and drain of ATG MOSFET´s, and obtain analytic formulae for threshold voltage, body effect, drain current, and channel length modulation effect in linear and saturation regions for both forward and reverse modes of operations. The model provides a physical analysis of the ATG structure, shows good agreement with measurement data, and is useful in circuit simulation with ATG devices

Keywords

MOSFET; semiconductor device models; ATG device; DC model; asymmetric trapezoidal gate MOSFET; body effect; channel length modulation; circuit simulation; drain current; parasitic effects; strong inversion; threshold voltage; Circuit simulation; Degradation; Integrated circuit modeling; Integrated circuit technology; MOSFET circuits; Parasitic capacitance; Performance gain; Performance loss; Shape; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.701476

Filename

701476