A DC model for asymmetric trapezoidal gate MOSFET´s in strong inversion

Asymmetric trapezoidal gate (ATG) MOSFET is an innovative device having a structure of a relatively narrow drain-side width in order to reduce parasitic effects for enhancing device performance. In this paper, we develop a DC model for ATG MOSFET´s. We use a charge-based approach to explore the asymmetric feature between source and drain of ATG MOSFET´s, and obtain analytic formulae for threshold voltage, body effect, drain current, and channel length modulation effect in linear and saturation regions for both forward and reverse modes of operations. The model provides a physical analysis of the ATG structure, shows good agreement with measurement data, and is useful in circuit simulation with ATG devices