DocumentCode :
1404770
Title :
Time-resolved optical characterization of electrical activity in integrated circuits
Author :
Tsang, James C. ; Kash, Jeffrey Alan ; Vallett, David P.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
88
Issue :
9
fYear :
2000
Firstpage :
1440
Lastpage :
1459
Abstract :
If the rate of improvement in the performance of advanced silicon integrated circuits is to be sustained, new techniques for the measurement of electrical waveforms in operating circuits are needed. Critical factors dictating this requirement include the increased speed and complexity of circuits, the growing importance of faults that appear only during high-speed operation, and the use of flip-chip packaging technologies. Two recently developed all-optical methods for measuring the switching activity from the backside of a chip are described and compared. One is a passive approach based on the measurement of hot carrier luminescence emitted from the channel of a CMOS field-effect transistor (FET) during switching. The second uses a laser probe to sense the switching induced modulation of the silicon optical constants near an FET´s source and drain.
Keywords :
CMOS integrated circuits; failure analysis; high-speed integrated circuits; high-speed optical techniques; integrated circuit measurement; CMOSFET; Si; electrical switching activity; failure analysis; flip-chip packaging; high-speed operation; hot carrier luminescence; laser beam modulation; laser voltage probe; optical constants; picosecond imaging circuit analysis; silicon integrated circuit; time-resolved optical measurement; Circuit faults; Electric variables measurement; FETs; High speed optical techniques; Integrated circuit measurements; Integrated optics; Optical sensors; Photonic integrated circuits; Semiconductor device measurement; Silicon;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/5.883316
Filename :
883316
Link To Document :
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