• DocumentCode
    1404792
  • Title

    Theory of variable-capacitance parametric amplifiers

  • Author

    Robinson, B.J.

  • Author_Institution
    Commonwealth Scientific and Industrial Research Organisation (CSIRO), Radiophysics Laboratory, Sydney, Australia
  • Volume
    109
  • Issue
    15
  • fYear
    1962
  • fDate
    3/1/1962 12:00:00 AM
  • Firstpage
    198
  • Lastpage
    208
  • Abstract
    An analysis is presented of variable-capacitance parametric amplifiers for the case where there is a loss resistance in series with the capacitance. Such a resistance provides the major form of loss in a reverse-biased semiconductor diode. It is shown that the coupling of two circuits by a pumped variable capacitance can be described by a simple equivalent circuit which has a direct physical interpretation. The characteristics of regenerative amplifiers and convertors, and of non-inverting convertors, are deduced from the equivalent circuits. The gain, bandwidth and noise properties of these amplifiers or convertors are shown to depend on two parameters of the pumped variable capacitance C, the mean Q at the signal frequency and the normalized amplitude of the variation of 1/C at the pump frequency. The noise temperature in each case is a function only of the product of these two parameters and the ratio of signal to idler (or output) frequencies. Particular attention is given to finding the optimum operating conditions and a brief discussion is given of the effects of variations of the capacitance at harmonics of the pump frequency, and of higher sidebands.
  • Keywords
    parametric amplifiers; semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEE - Part C: Monographs
  • Publisher
    iet
  • ISSN
    0369-8904
  • Type

    jour

  • DOI
    10.1049/pi-c.1962.0026
  • Filename
    5245394