DocumentCode
1404823
Title
Band-gap narrowing and high-frequency characteristics of Si/GexSi1-x heterojunction bipolar transistors formed by Ge ion implantation in Si
Author
Lombardo, Salvatore A. ; Privitera, Vittorio ; Pinto, Angelo ; Ward, Peter ; La Rosa, Gregorio ; Campisano, Salvatore U.
Author_Institution
Ist. di Metodologie e Tecnologie per la Microelettronica, Catania, Italy
Volume
45
Issue
7
fYear
1998
fDate
7/1/1998 12:00:00 AM
Firstpage
1531
Lastpage
1537
Abstract
Si/GexSi1-x heterojunction n-p-n bipolar transistors (HBT´s) with a double-polysilicon self-aligned structure were fabricated by using high dose Ge implantation for the formation of the Si/GexSi1-x heterostructure and As and BF2 implantation for emitter and base doping. DC and high frequency electrical characteristics are investigated for Ge concentrations up to 7 at.% and for base widths down to 35 nm. Improvements in electrical characteristics compared to reference Si transistors are demonstrated. Experimental data indicating that these improvements are related to an effective band gap engineering are shown and discussed
Keywords
Ge-Si alloys; elemental semiconductors; energy gap; heterojunction bipolar transistors; ion implantation; semiconductor materials; silicon; Ge ion implantation; Si-GeSi; Si/GexSi1-x heterojunction n-p-n bipolar transistor; band gap engineering; double-polysilicon self-aligned structure; high frequency electrical characteristics; Bipolar transistors; Doping; Electric variables; Fabrication; Heterojunction bipolar transistors; Implants; Ion implantation; Molecular beam epitaxial growth; Photonic band gap; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.701485
Filename
701485
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