DocumentCode
1404915
Title
An analysis of the effective position of the two-dimensional electron gas in the channel of MODFET epitaxial layer structures
Author
Wood, J. ; Morton, C.G.
Author_Institution
Dept. of Electron., York Univ., UK
Volume
45
Issue
7
fYear
1998
fDate
7/1/1998 12:00:00 AM
Firstpage
1622
Lastpage
1624
Abstract
The charge control behavior of a range of heterostructure material systems typical of MODFETs has been investigated using a numerical model, and the “effective position of the two-dimensional electron gas (2-DEG) in the channel”, Δd, has been analyzed. We have shown that the parameter Δd is well-defined for double-heterojunction structures, though with values very different from the often quoted figure of 80 Å , and that for AlGaAs/GaAs single heterojunctions, Δd is strongly gate voltage dependent with values always larger than 80 Å
Keywords
high electron mobility transistors; semiconductor epitaxial layers; two-dimensional electron gas; AlGaAs-GaAs; MODFET epitaxial layer; charge control; double heterojunction; numerical model; single heterojunction; two-dimensional electron gas; Capacitance; Electrons; Epitaxial layers; Gallium arsenide; HEMTs; MODFETs; Microwave technology; Silicon; Solid state circuits; Two dimensional displays;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.701499
Filename
701499
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