Title :
Positive oxide charge from hot hole injection during channel-hot-electron stress
Author :
Han, K. Michael ; Sah, Chih-Tang
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
7/1/1998 12:00:00 AM
Abstract :
Positive oxide charge build up (+QOT) during channel-hot-electron (CHE) stress in silicon n-channel MOS transistors from 1.0 and 0.35-μm technologies is monitored by the direct-current current-voltage (DCIV) method. Experiments demonstrated the following: (1) +QOT is located over the drain/channel junction space-charge-region, (2) threshold hole kinetic energy equals the SiO 2/Si hole barrier, φXh=4.25 eV, (3) the oxide-charging carriers near the threshold are the secondary hot holes generated by interband impact-collision and Auger-recombination of the CHEs with thermalized holes impact-generated in the n+ drain by CHEs, and (4) the smallest threshold drain acceleration voltage from interband Auger-recombination among the four intrinsic pathways is smaller than φXh by EGap-Sl, 4.25 V-1.12 V=3.13 V
Keywords :
Auger effect; MOSFET; electron-hole recombination; hot carriers; impact ionisation; space charge; 0.35 micron; 1.0 micron; Auger recombination; Si-SiO2; SiO2/Si hole barrier; channel hot electron stress; direct-current current-voltage method; hot hole injection; interband impact collision; junction space charge; positive oxide charge buildup; silicon n-channel MOS transistor; threshold hole kinetic energy; Acceleration; Channel hot electron injection; Hot carriers; Kinetic energy; MOSFETs; Monitoring; Silicon; Space technology; Stress; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
