Bottom-emitting VCSEL´s for high-CW optical output power

Author

Grabherr, M. ; Jager, R. ; Miller, M. ; Thalmaier, C. ; Herlein, J. ; Michalzik, R. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

10

Issue

8

fYear

1998

Firstpage

1061

Lastpage

1063

Abstract

Bottom-emitting vertical-cavity surface-emitting InGaAs MQW lasers operating in the 980-nm wavelength regime have been designed for high continuous-wave optical output power. Devices of 200-μm active diameter and optimized performance reach 350-mW maximum output power when mounted on a heat sink. 50-μm-size lasers produce 100 mW at 25% electrical to optical power conversion efficiency. Thermal properties and size dependent basic characteristics are investigated in detail.

Keywords

III-V semiconductors; gallium arsenide; heat sinks; indium compounds; infrared sources; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; 100 mW; 200 mum; 25 percent; 350 mW; 50 mum; 980 nm; InGaAs; InGaAs MQW lasers; active diameter; bottom-emitting VCSEL laser diodes; electrical to optical power conversion efficiency; heat sink; high continuous-wave optical output power; high-CW optical output power; maximum output power; optimized performance; size dependent basic characteristics; thermal properties; vertical-cavity surface-emitting lasers; Heat sinks; Indium gallium arsenide; Optical design; Optical surface waves; Power generation; Power lasers; Quantum well devices; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.701502

Filename

701502