Title :
Single-mode operation in an antiguided vertical-cavity surface-emitting laser using a low-temperature grown AlGaAs dielectric aperture
Author :
Oh, T.-H. ; Shchekin, O.B. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
Data are presented on a single mode InGaAs DBR MQW vertical-cavity surface-emitting laser that uses a low temperature growth of a highly resistive AlGaAs dielectric aperture. An epitaxial regrowth is used to contact the laser active region, with the AlGaAs aperture resulting in cavity-induced antiguiding. Antiguiding is observed in 6-μm diameter devices, with single-mode operation obtained over the range of continuous-wave operation (about 8× threshold). Pulsed operation shows lowest order transverse mode profiles up to 24× threshold.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; epitaxial growth; gallium arsenide; indium compounds; laser cavity resonators; laser modes; quantum well lasers; semiconductor growth; surface emitting lasers; waveguide lasers; 6 mum; AlGaAs; InGaAs; antiguided vertical-cavity surface-emitting laser; cavity-induced antiguiding; continuous-wave operation; epitaxial regrowth; highly resistive AlGaAs dielectric aperture; laser active region; low temperature growth; low-temperature grown AlGaAs dielectric aperture; lowest order transverse mode profiles; pulsed operation; single mode InGaAs DBR MQW vertical-cavity surface-emitting laser; single-mode operation; Apertures; Dielectrics; Gallium arsenide; Laser modes; Molecular beam epitaxial growth; Optical resonators; Optical scattering; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
