Title :
Monolithic integration of a quantum-well laser and an optical amplifier using an asymmetric twin-waveguide structure
Author :
Studenkov, P.V. ; Gokhale, M.R. ; Dries, J.C. ; Forrest, S.R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We demonstrate the monolithic integration of a 1.55 μm wavelength InGaAsP-InP multiple-quantum-well (MQW) laser and a traveling-wave optical amplifier using an asymmetric, vertical twin-waveguide structure. The laser and amplifier share the same strained InGaAsP MQW active layer grown by gas-source molecular beam epitaxy, while the underlying passive waveguide layer is used for on-chip optical interconnections between the active devices. The asymmetric twin-waveguide structure uses the difference in modal gains to discriminate between the even and odd modes.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; integrated optoelectronics; laser modes; laser transitions; optical interconnections; quantum well lasers; symmetry; waveguide lasers; 1.55 mum; InGaAsP-InP; InGaAsP-InP MQW laser; active devices; asymmetric twin-waveguide lasers; asymmetric vertical twin-waveguide structure; even modes; gas-source molecular beam epitaxy; modal gains; monolithic integration; odd modes; on-chip optical interconnections; quantum-well laser; semiconductor optical amplifier; strained InGaAsP MQW active layer; traveling-wave optical amplifier; underlying passive waveguide layer; Gas lasers; Integrated optics; Monolithic integrated circuits; Optical amplifiers; Optical interconnections; Quantum well devices; Quantum well lasers; Semiconductor optical amplifiers; Stimulated emission; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
