Title :
1.9-W quasi-CW from a near-diffraction-limited 1.55-μm InGaAsP-InP tapered laser
Author :
Cho, S.H. ; Fox, S. ; Johnson, F.G. ; Vusirikala, V. ; Stone, D. ; Dagenais, M.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
1.9-W quasi-CW output power with about 80% of the power in the central lobe is obtained from a 1.55-μm wavelength InGaAsP-InP MQW tapered unstable resonator laser. This power is found to be emitted in a near-diffraction-limited beam.
Keywords :
gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser stability; laser transitions; light diffraction; quantum well lasers; waveguide lasers; 1.55 mum; 1.9 W; InGaAsP-InP; InGaAsP-InP MQW tapered unstable resonator laser; central lobe; near-diffraction-limited 1.55-/spl mu/m InGaAsP-InP tapered laser; near-diffraction-limited beam; quasi-CW; quasi-CW output power; Diffraction; Etching; Indium phosphide; Laser beams; Molecular beam epitaxial growth; Power amplifiers; Power generation; Power lasers; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
