Title :
Monolithically integrated InGaAs-AlGaAs master oscillator power amplifier with grating outcoupler
Author :
Uemukai, M. ; Matsumoto, N. ; Suhara, T. ; Nishihara, H. ; Eriksson, N. ; Larsson, A.
Author_Institution :
Dept. of Electron., Osaka Univ., Japan
Abstract :
A monolithically integrated master oscillator power amplifier with a grating outcoupler, fabricated using a simple process without regrowth and emitting a collimated output beam, is proposed and demonstrated using an InGaAs-AlGaAs strained single-quantum-well gradient-index separate-confinement-heterostructure. Stable single-mode lasing up to 124-mW output power was obtained under continuous-wave operation. An increase of the output beam divergence, due to a wavefront distortion produced in the power amplifier, was observed with increasing power amplifier injection current. The wavefront distortion can be compensated by an appropriate design of the grating outcoupler.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; gradient index optics; indium compounds; integrated optoelectronics; optical couplers; quantum well lasers; 124 mW; InGaAs-AlGaAs; InGaAs-AlGaAs strained single-quantum-well gradient-index separate-confinement-heterostructure; collimated output beam; continuous-wave operation; grating outcoupler design; monolithically integrated InGaAs-AlGaAs master oscillator power amplifier; output beam divergence; output power; power amplifier; power amplifier injection current; stable single-mode lasing; wavefront distortion; Collimators; Distributed Bragg reflectors; Gratings; Laser beams; Optical amplifiers; Optical distortion; Oscillators; Power amplifiers; Semiconductor optical amplifiers; Surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
