Title :
46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier
Author :
Takahata, K. ; Muramoto, Y. ; Fukano, H. ; Kato, Kazuhiko ; Kozen, A. ; Nakajima, O. ; Matsuoka, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
A large bandwidth monolithically integrated photoreceiver for 1.5-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.
Keywords :
HEMT integrated circuits; infrared detectors; integrated optoelectronics; optical receivers; optical waveguides; p-i-n photodiodes; photodetectors; semiconductor growth; vapour phase epitaxial growth; 1.55 mum; 40 Gbit/s; 46.5 GHz; GHz-bandwidth monolithic receiver OEIC; HEMT distributed amplifier; InAlAs-InGaAs; InAlAs-InGaAs high-electron mobility transistor; clear eye opening; high responsivity; high-speed optical transmission systems; large bandwidth monolithically integrated photoreceiver; long-wavelength receiver OEIC; millimeter-wave fiber-radio systems; monolithic receiver optoelectronic integrated circuit; single-step metal-organic vapor-phase epitaxy; waveguide p-i-n photodiode; waveguide p-i-n photodiode layers; Bandwidth; Distributed amplifiers; Epitaxial growth; HEMTs; MODFETs; Monolithic integrated circuits; Optical receivers; Optical waveguides; Optoelectronic devices; PIN photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
