DocumentCode
1405223
Title
Gallium-arsenide E- and D-MESFET device noise characteristics operated at cryogenic temperatures with ultralow drain current
Author
Sato, R.N. ; Sokolich, M. ; Doudoumopoulos, Nicholas ; Duffey, J.R.
Author_Institution
Hughes Aircraft Co., El Segundo, CA, USA
Volume
9
Issue
5
fYear
1988
fDate
5/1/1988 12:00:00 AM
Firstpage
238
Lastpage
240
Abstract
The low-frequency noise characteristics of GaAs MESFETs operating at very low power and at cryogenic temperatures of 77 and 10 K as well as at room temperature are discussed. A self-aligned gate and a buried p-layer were incorporated to maximize device gain and minimize low-frequency noise. Measurements at 77 K show a noise voltage spectral density of 1.0-2.0 mu V/ square root Hz at 1.0 Hz (referred to the transistor input) with a drain current of 1.0 mu A.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; cryogenics; electron device noise; gallium arsenide; 1 muA; 10 K; 295 K; 77 K; D-MESFET; E-MESFET; GaAs; MESFETs; buried p-layer; cryogenic temperatures; low-frequency noise characteristics; noise voltage spectral density; room temperature; self-aligned gate; ultralow drain current; very low power; Circuit noise; Circuit testing; Cryogenics; Density measurement; Gallium arsenide; Low-frequency noise; MESFETs; Noise measurement; Plasma measurements; Temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.702
Filename
702
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