Title :
High-performance submicrometer channel MOSFETs for analog applications
Author :
Antoniadis, Dimitri A.
fDate :
12/1/1988 12:00:00 AM
Abstract :
The authors report the design and fabrication of a submicrometer-channel-length DMOS transistor that offers a significant increase in r0, a higher gm, an increase in breakdown voltage, and a reduced body effect when compared to regular NMOS transistors. The cost of integration of this device is two mask steps and two implants. Only photoresist patterning is required, and the process temperature budget is easily accommodated by any CMOS process
Keywords :
CMOS integrated circuits; insulated gate field effect transistors; semiconductor technology; CMOS process; DMOS transistor; analog applications; breakdown voltage; implants; mask steps; photoresist patterning; process temperature budget; reduced body effect; submicrometer-channel-length; transconductance; Boron; Doping; FETs; Glass; Immune system; MOS devices; MOSFETs; Parasitic capacitance; Passivation; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
