Title :
Pick-and-place multi-wafer bonding for optoelectronic integration
Author :
Zhu, Z.H. ; Zhou, Y.C. ; Crouse, D. ; Lo, Y.H.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
6/11/1998 12:00:00 AM
Abstract :
The pick-and-place multi-wafer bonding technology is demonstrated by simultaneous direct bonding of nine 1.3 μm InP strain-compensated multiquantum well wafers to a GaAs substrate. Both the bonded sample and the control sample showed identical X-ray diffraction characteristics and the bonded wafers had ~75% room temperature photoluminescence intensities relative to the control sample
Keywords :
III-V semiconductors; X-ray diffraction; indium compounds; integrated optoelectronics; photoluminescence; semiconductor quantum wells; wafer bonding; 1.3 micrometre; GaAs; III-V semiconductors; InP-GaAs; X-ray diffraction characteristics; optoelectronic integration; pick-and-place multi-wafer bonding; room temperature photoluminescence intensities; simultaneous direct bonding; strain-compensated multiquantum well wafers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980889
