DocumentCode
1405693
Title
AlGaAs/GaAs tunnelling diode integrated with nanometre-scale oxides patterned by atomic force microscope
Author
Okada, Y. ; Amano, S. ; Iuchi, Y. ; Kawabe, M. ; Harris, J.S., Jr.
Author_Institution
Inst. of Mater. Sci., Tsukuba Univ., Ibaraki, Japan
Volume
34
Issue
12
fYear
1998
fDate
6/11/1998 12:00:00 AM
Firstpage
1262
Lastpage
1263
Abstract
The authors have fabricated a tunnel diode comprising a two-dimensional electron gas channel formed at an AlGaAs/GaAs heterojunction by molecular beam epitaxy and nanometre-scale oxides locally generated using an atomic force microscope (AFM). The AFM-generated oxide lines have been adopted as integral parts of the device, for the first time serving as effective tunnel barriers for single electron transport
Keywords
III-V semiconductors; aluminium compounds; atomic force microscopy; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; single electron transistors; tunnel diodes; two-dimensional electron gas; AlGaAs-GaAs; atomic force microscope; molecular beam epitaxy; nanometre-scale oxides; oxide lines; single electron transport; tunnel barriers; tunnelling diode; two-dimensional electron gas channel;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980865
Filename
702413
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