DocumentCode
1405700
Title
Anisotropic gate recess dry-etching for InGaP/InGaAs/GaAs HEMTs depending on size of active region
Author
Nihei, M. ; Suehiro, H. ; Watanabe, Y.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
34
Issue
12
fYear
1998
fDate
6/11/1998 12:00:00 AM
Firstpage
1263
Lastpage
1264
Abstract
The authors have investigated the dependence of the GaAs dry etching profile on the size of the active region. Anisotropy of the etching profile was improved by increasing the size of the active region from 72 to 7000 μm. By applying this phenomenon, we suppressed the side-etching and decreased the source resistance Rs of 0.15 μm gate InGaP/InGaAs/GaAs HEMTs by ~30%, resulting in a higher transconductance gm of 565 mS/mm
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; sputter etching; 0.15 micron; HEMTs; III-V semiconductors; InGaP-InGaAs-GaAs; active region; anisotropic gate recess dry-etching; etching profile anisotropy; side-etching; source resistance; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980736
Filename
702414
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